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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10068858 B1

PDFFull Text
Date of Patent:
Sep. 04, 2018

Filed:

Oct. 04, 2016

Compound semiconductor substrate

Applicant:

Coorstek Kk, Shinagawa-ku, Tokyo, JP;

Inventors:

Yoshihisa Abe, Hadano, JP;

Kenichi Eriguchi, Hadano, JP;

Noriko Omori, Hadano, JP;

Hiroshi Oishi, Hadano, JP;

Jun Komiyama, Hadano, JP;

Assignee:

COORSTEK KK, Tokyo, JP;

Attorney:

Buchanan, Ingersoll & Rooney PC

Primary Examiner:

Kevin M Picardat

Int. Cl.
CPC ...
H01L 31/0256 (2006.01); H01L 23/00 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); C30B 25/183 (2013.01); C30B 29/406 (2013.01); H01L 21/0245 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01); H01L 21/02502 (2013.01); H01L 21/02505 (2013.01); H01L 22/12 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 21/02378 (2013.01); H01L 21/02422 (2013.01); H01L 29/7786 (2013.01);
Abstract

A compound semiconductor substrate according to the present invention includes a compound semiconductor layer formed on one main surface of a ground substrate via a seed layer, wherein the ground substrate is formed of a sintered body, the seed layer is formed of a single crystal, the compound semiconductor layer includes a structure having a buffer layer and an active layer that are sequentially crystal-grown on the seed layer, a thermal expansion coefficient of the sintered body is 0.7 times or more and 1.4 times or less an average thermal expansion coefficient of the entire compound semiconductor layer, and an FWHM of an X-ray diffraction peak of the buffer layer obtained by an X-ray diffraction rocking curve measurement is 800 arcsec or less.

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