The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Jul. 28, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Josephine B. Chang, Bedford Hills, NY (US);
Michael A. Guillorn, Cold Springs, NY (US);
Fei Liu, Yorktown Heights, NY (US);
Adam M. Pyzyna, Cortlandt Manor, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 29/45 (2006.01); H01L 21/8234 (2006.01); H01L 23/485 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/02134 (2013.01); H01L 21/02137 (2013.01); H01L 21/7684 (2013.01); H01L 21/7688 (2013.01); H01L 21/76817 (2013.01); H01L 21/76886 (2013.01); H01L 21/76897 (2013.01); H01L 21/823418 (2013.01); H01L 21/823475 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 29/45 (2013.01);
Abstract
A modified trench metal-semiconductor alloy formation method involves depositing a layer of a printable dielectric or a sacrificial carbon material within a trench structure and over contact regions of a semiconductor device, and then selectively removing the printable dielectric or sacrificial carbon material to segment the trench and form plural contact vias. A metallization layer is formed within the contact vias and over the contact regions.