The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Mar. 17, 2015
Applicant:
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 23/31 (2006.01); H01L 21/02 (2006.01); H01L 23/29 (2006.01); H01L 23/373 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3171 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 23/29 (2013.01); H01L 23/291 (2013.01); H01L 23/293 (2013.01); H01L 23/3135 (2013.01); H01L 23/3192 (2013.01); H01L 23/373 (2013.01); H01L 29/1608 (2013.01); H01L 23/3121 (2013.01); H01L 23/562 (2013.01); H01L 2224/73265 (2013.01);
Abstract
A semiconductor device includes: a semiconductor element which includes semiconductor substrate, an insulating film formed on a front surface of the semiconductor substrate and having an opening, and an electrode formed in the opening on the front surface of the semiconductor substrate; and a first protective film disposed to cover the semiconductor element. The insulating film has a thickness of not less than 1/500 of a thickness of the semiconductor substrate and not more than 4 μm. The insulating film has a compressive stress per film thickness of not less than 100 MPa/μm.