The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Oct. 17, 2012
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823412 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 21/823418 (2013.01); H01L 29/6659 (2013.01); H01L 29/66537 (2013.01); H01L 29/7833 (2013.01);
Abstract
An integrated circuit containing MOS transistors may be formed using a split carbon co-implantation. The split carbon co-implant includes an angled carbon implant and a zero-degree carbon implant that is substantially perpendicular to a top surface of the integrated circuit. The split carbon co-implant is done at the LDD and halo implant steps.