The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Dec. 14, 2016
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Prakash Dalpatbhai Dev, Lubbock, TX (US);
Fuchao Wang, Plano, TX (US);
Nicholas Andrew Kusek, Dallas, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2251 (2013.01); H01L 21/0217 (2013.01); H01L 21/30655 (2013.01); H01L 21/31111 (2013.01); H01L 21/324 (2013.01);
Abstract
In a described example method, semiconductor wafer with a backside silicon nitride layer is encapsulated with a diffusion barrier layer prior to a high temperature anneal greater than about 1000 degrees Celsius. After the high temperature anneal the diffusion barrier layer and the backside silicon nitride layers are stripped.