The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Oct. 12, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Young-Sik Seo, Hwaseong-si, KR;

Seung-Heon Lee, Seoul, KR;

Hyun-Woo Lee, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/033 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/30655 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01);
Abstract

A method for fabricating a semiconductor device includes forming a first mask pattern on a first film to extend in a first direction, forming a first spacer on either side wall of the first mask pattern, forming a second film to cover the first spacer and the first film, and forming a second mask pattern on the second film. The second mask pattern extends in a second direction different from the first direction. The method further includes forming a second spacer on either side wall of the second mask pattern, etching the first film using the first spacer and the second spacer as etch masks to form a contact pattern, and removing the first and second spacers to expose the contact pattern.


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