The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Dec. 27, 2016
Applicant:
Sandisk Technologies Llc, Plano, TX (US);
Inventors:
Deepanshu Dutta, Fremont, CA (US);
Sarath Puthenthermadam, San Jose, CA (US);
Chris Yip, Saratoga, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G06F 3/0619 (2013.01); G06F 3/0626 (2013.01); G06F 3/0658 (2013.01); G06F 3/0679 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01);
Abstract
A non-volatile memory system implements a multi-pass programming process that includes separately programming groups of memory cells in a common block by performing programming for memory cells that are connected to two adjacent word lines and are part of a first group of memory cells followed by performing programming for other memory cells that are also connected to the two adjacent word lines and are part of a second group of memory cells.