The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Mar. 06, 2017
Applicant:

Kerdea Technologies, Inc., Greenville, NC (US);

Inventor:

Ken Ervin Fosaaen, Winterville, NC (US);

Assignee:

KERDEA TECHNOLOGIES, INC., Greenville, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K 7/42 (2006.01); G01M 15/10 (2006.01); F02D 41/14 (2006.01); F02D 41/24 (2006.01); G01N 27/406 (2006.01); F01N 11/00 (2006.01); G01N 33/00 (2006.01);
U.S. Cl.
CPC ...
G01M 15/104 (2013.01); F01N 11/007 (2013.01); F02D 41/1445 (2013.01); F02D 41/1446 (2013.01); F02D 41/1455 (2013.01); F02D 41/1458 (2013.01); F02D 41/2416 (2013.01); G01N 27/4065 (2013.01); G01N 33/0016 (2013.01); G01N 33/0036 (2013.01); H05K 999/99 (2013.01); F01N 2560/025 (2013.01); F01N 2560/20 (2013.01); F02D 41/2438 (2013.01);
Abstract

An oxygen sensor that has both an n-type oxygen sensing portion comprising an n-type semiconductor layer and a p-type oxygen sensing portion comprising an p-type semiconductor layer. The n-type sensing portion and the p-type sensing portion share the common electrode. The n-type semiconductor layer and the p-type semiconductor layer attach directly to the common electrode, but are not in physical contact with each other such that a lateral gap exists between the n-type semiconductor layer and the p-type semiconductor layer. The air:fuel ratio for a combustion process may be determined, using the same oxygen sensor, across a range of air:fuel values in both the rich and lean regions; as such, the oxygen sensor may act as a wideband oxygen sensor.


Find Patent Forward Citations

Loading…