The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Sep. 17, 2014
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Hitoshi Noguchi, Takasaki, JP;
Daisuke Takeuchi, Tsukuba, JP;
Satoshi Yamasaki, Tsukuba, JP;
Masahiko Ogura, Tsukuba, JP;
Hiromitsu Kato, Tsukuba, JP;
Toshiharu Makino, Tsukuba, JP;
Hideyo Okushi, Tsukuba, JP;
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
A method for manufacturing a single crystal diamond in which vapor phase synthetic single crystal diamond is additionally deposited on a single crystal diamond seed substrate obtained by vapor phase synthesis, includes a step of measuring flatness of the seed substrate, a step of determining whether or not to flatten the seed substrate based on the measurement result of the flatness, and any one of the following two steps of a step of additionally depositing the vapor phase synthetic single crystal diamond after flattening the seed substrate for which the flattening is necessary based on the determination and a step of additionally depositing the vapor phase synthetic single crystal diamond without flattening the seed substrate for which the flattening is not necessary based on the determination.