The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Nov. 19, 2014
Applicant:
SK Siltron Co., Ltd., Gumi-si, Gyeongsangbuk-do, KR;
Inventors:
In Sik Bang, Gumi-si, KR;
Cheol Hwan Kim, Gumi-si, KR;
Assignee:
SK SILTRON CO., LTD., Gumi-si, Gyeongsangbuk-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 17/00 (2006.01); C30B 15/14 (2006.01); C30B 35/00 (2006.01); C30B 15/20 (2006.01); C30B 29/20 (2006.01); C30B 11/00 (2006.01);
U.S. Cl.
CPC ...
C30B 17/00 (2013.01); C30B 15/14 (2013.01); C30B 15/20 (2013.01); C30B 29/20 (2013.01); C30B 35/00 (2013.01); C30B 11/006 (2013.01); Y10T 117/1004 (2015.01); Y10T 117/1008 (2015.01);
Abstract
An embodiment comprises: a chamber; a crucible provided in the chamber and accommodating a molten liquid which is a raw material for single crystal growth; a crucible screen disposed on the upper end of the crucible; and a moving unit for raising or lowering the crucible screen, wherein the crucible screen and a first upper adiabatic unit are raised to control the stroke distance, thereby preventing the impossibility of a lift-off process caused by a shortage of the stroke distance and the generation of cracks in single crystals.