The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Jul. 15, 2016
Korea Electronics Technology Institute, Seongnam-si, Gyeonggi-do, KR;
Suk Won Jung, Osan-si, KR;
Yeon Shik Choi, Seoul, KR;
Young Chang Jo, Yongin-si, KR;
Jae Gi Son, Yongin-si, KR;
Ki Man Jeon, Seongnam-si, KR;
Woo Kyeong Seong, Seongnam-si, KR;
Kook Nyung Lee, Seoul, KR;
Min Ho Lee, Seoul, KR;
Hyuck Ki Hong, Uijeongbu-si, KR;
Korea Electronics Technology Institute, Gyeonggi-do, KR;
Abstract
Disclosed is an image sensor using a nanowire, including a substrate, a photodetector for sensing incident light to produce photocurrent, the magnitude of which varies depending on the intensity of incident light, a signal processing module for outputting photodetection current including information about the presence or absence of incident light and the intensity of incident light based on the presence or absence of photocurrent and the magnitude thereof, and an electrode configured to electrically connect the photodetector and the signal processing module to each other and formed on the photodetector and the signal processing module, wherein the photodetector and the signal processing module are formed on the substrate, and the photodetector is formed of at least one silicon nanowire.