The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Feb. 01, 2017
Qualcomm Incorporated, San Diego, CA (US);
Alon Yehezkely, Haifa, IL;
Sagi Kupferman, Givataim, IL;
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
The disclosure generally relates to a compact bypass and decoupling structure that can be used in a millimeter-wave radio frequency integrated circuit (RFIC). For example, according to various aspects, an RFIC incorporating the compact bypass and decoupling structure may comprise a grounded substrate, a mid-metal ground plane, a bypass capacitor disposed between the grounded substrate and the mid-metal ground plane, and a decoupling inductor disposed over the mid-metal ground plane. The bypass capacitor may close a current loop in the RFIC and the decoupling inductor may provide damping in a supply network associated with the RFIC. Furthermore, the decoupling conductor may have a self-resonance substantially close to an operating band associated with the RFIC to increase series isolation, introduce substrate losses that facilitate the damping in the supply network, and prevent high-Q resonances.