The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Sep. 15, 2017
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Masakazu Mizokami, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04K 1/02 (2006.01); H04L 25/03 (2006.01); H04L 25/49 (2006.01); H03G 3/30 (2006.01); G01R 25/04 (2006.01); H03F 1/02 (2006.01); H03F 3/217 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03G 3/3042 (2013.01); G01R 25/04 (2013.01); H03F 1/0227 (2013.01); H03F 1/0233 (2013.01); H03F 3/217 (2013.01); H03F 3/245 (2013.01);
Abstract

In a related-art semiconductor device, there is a problem that a second-order harmonic distortion originating in a power amplifier driven by a rectangular-wave signal cannot be effectively suppressed. According to an embodiment, a semiconductor device generates a transmission signal RF_OUT for driving an antenna by receiving first transmission pulses INd_P and second transmission pulses INd_N having a duty ratio lower than 50%, adjusting a phase difference between the first and second transmission pulses INd_P and INd_N to a predefined phase difference, and supplying the phase-difference-adjusted first and second transmission pulses INd_P and INd_N to a power amplifier


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