The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Apr. 29, 2016
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Karel Ptacek, Roznov Pod Radhostem, CZ;
Tomas Tichy, Jihlava, CZ;
Assignee:
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 3/335 (2006.01); H02M 1/08 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 3/33523 (2013.01); H02M 1/08 (2013.01); H02M 2001/0009 (2013.01);
Abstract
A power conversion circuit including an SR MOSFET is provided. A minimum off-time timer for the SR MOSFET is started. A voltage potential at a first terminal of the SR MOSFET is measured. The SR MOSFET is turned on after a rate of change over time of the voltage potential exceeds a first threshold and before the minimum off-time timer expires.