The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Mar. 16, 2017
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Kazuhisa Takagi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01S 5/12 (2006.01); G02B 6/136 (2006.01); H01S 5/026 (2006.01); H01S 5/02 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
H01S 5/12 (2013.01); G02B 6/136 (2013.01); H01S 5/0203 (2013.01); H01S 5/026 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12107 (2013.01); G02B 2006/12121 (2013.01); G02B 2006/12126 (2013.01); G02B 2006/12142 (2013.01); G02B 2006/12161 (2013.01); G02B 2006/12173 (2013.01); G02B 2006/12176 (2013.01);
Abstract

A diffraction grating pattern is formed in the first insulating film on the active layer by electron beam lithography, and at the same time an end facet formation pattern whose end portion corresponds to a position of an emission end facet of the optical modulator is formed in the first insulating film on the optical absorption layer by electron beam lithography. A second insulating film is formed on the end facet formation pattern. The diffraction grating formation layer is etched using the first and second insulating films as masks to form a diffraction grating, and is embedded with an embedded layer. The second insulating film is removed. A third insulating film is formed on the diffraction grating and the embedded layer not to cover the end facet formation pattern. The optical absorption layer is etched using the first and third insulating films as masks to form the emission end facet.


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