Semiconductor laser device and method of making the same

Abstract

The present invention provides a semiconductor laser device for improving temperature characteristics of waveguide structures and realizing stable light emitting patterns and high output, and a method for making the same. The semiconductor laser device () comprises: an n-type clad layer () laminated on a substrate (); an active layer () laminated on the n-type clad layer (); a p-type clad layer () laminated on the active layer (); and a plurality of waveguide structures () formed on the p-type clad layer () and having a ridge of a horn shape in top view. In this configuration, a divider () is formed between adjacent waveguide structures (), and the divider () comprises: a groove () dividing the active layer (); and a heat dissipation material () filled in the groove () and having a thermal conductivity higher than a thermal conductivity of a semiconductor layer ().