The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Oct. 06, 2011
Applicants:

Sören Hartmann, Baesweiler, DE;

Herbert Lifka, Son, NL;

Inventors:

Sören Hartmann, Baesweiler, DE;

Herbert Lifka, Son, NL;

Assignee:

OLEDWORKS, LLC, Rochester, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 51/10 (2006.01); H01L 51/00 (2006.01); H01L 51/44 (2006.01); H01L 51/52 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 51/107 (2013.01); H01L 51/0017 (2013.01); H01L 51/448 (2013.01); H01L 51/5237 (2013.01); H01L 51/5253 (2013.01); H01L 27/3276 (2013.01); H01L 27/3288 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11);
Abstract

The invention relates to method for manufacturing an electronic device comprising an organic layer (). According to this method, a stack with a metal layer () and an organic layer () as first and second outer layers is structured by etching both these outer layers. In one particular embodiment, an additional metal layer () may be generated on the outermost metal layer () by galvanic growth through a structured isolation 10 layer (). After removal of said isolation layer (), the metal () may be etched in the openings of the additional metal layer (). In a further etching step, the organic material () may be removed in said openings, too.


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