The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Nov. 27, 2015
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Keon Hwa Lee, Seoul, KR;

Su Hyoung Son, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 33/38 (2010.01); H01L 33/30 (2010.01); H01L 33/40 (2010.01); H01L 33/20 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/385 (2013.01); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/30 (2013.01); H01L 33/405 (2013.01);
Abstract

Embodiments of a light-emitting element and a light-emitting element array comprise: a light-emitting structure which includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; first and second electrodes which are disposed respectively on the first and second conductive type semiconductor layers; and an insulation layer which is disposed on the light-emitting structure exposed between the first electrode and the second electrode, wherein the second electrode comprises a light-emitting element including: a first part which overlaps with the second conductive type semiconductor layer in the thickness direction of the light-emitting structure; and a second part which extends from the first part and does not overlap with the second conductive type semiconductor layer in the thickness direction, thereby being capable of improving the productivity of a light-emitting element manufacturing process while minimizing the light leakage phenomenon between the light-emitting structure and the second electrode.


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