The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Dec. 07, 2015
Dowa Electronics Materials Co., Ltd., Chiyoda-ku, Tokyo, JP;
Takehiko Fujita, Gotenba, JP;
Yasuhiro Watanabe, Akita, JP;
DOWA Electronics Materials Co., Ltd., Chiyoda-ku, Tokyo, JP;
Abstract
We propose a method of producing a III nitride semiconductor light-emitting device including a p-type semiconductor layer, in which the p-type semiconductor layer is formed by the steps comprising: an electron blocking layer formation step for forming an electron blocking layer made of AlGaN (b<y≤1) on a light emitting layer; and a p-type contact formation step for forming a p-type contact layer which is AlGaN (0≤x≤0.1), directly on the electron blocking layer, and in which the electron blocking layer formation step is performed using a carrier gas containing hydrogen as a main component, and the p-type contact formation step is performed using a carrier gas containing nitrogen as a main component.