The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Jul. 19, 2016
Applicant:

Ashok Chaudhari, Briarcliff Manor, NY (US);

Inventor:

Ashok Chaudhari, Briarcliff Manor, NY (US);

Assignee:

Solar-Tectic LLC, Briarcliff Manor, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0725 (2012.01); H01L 31/18 (2006.01); H01L 31/0236 (2006.01); H01L 31/032 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0725 (2013.01); H01L 31/02363 (2013.01); H01L 31/02366 (2013.01); H01L 31/0324 (2013.01); H01L 31/0326 (2013.01); H01L 31/18 (2013.01); Y02E 10/50 (2013.01); Y02P 70/521 (2015.11);
Abstract

A simple manufacturing method is provided for the fabrication of the IV-VI group of semiconductor films on inexpensive substrates for highly efficient tandem or multi junction solar cells and a variety of other electronic devices such as transistors and LEDs. Specifically, the method includes depositing a textured oxide buffer on a substrate; depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being a component of a IV-VI compound; and forming a layer on the metal-inorganic film on which an additional element from the IV-VI compound is added, forming a IV-VI layer on a semiconductor device. The films comprising tin sulfides—SnS (tin sulphide), SnS, and SnS—are grown on inexpensive substrates, such as glass or flexible plastic, at low temperature, allowing for R2R (roll-to-roll) processing.


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