The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
May. 05, 2016
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Jinming Li, Guangdong, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;
Abstract
The present disclosure relates to a low temperature poly-silicon thin film transistor and a method of preparing the same. The low temperature poly-silicon thin film transistor includes a substrate, a metal induction layer formed on the substrate, a barrier layer formed on the metal induction layer, and an amorphous silicon film layer formed on the barrier layer, the amorphous silicon film layer being converted into a poly-silicon film layer under the inducing effect of the metal induction layer, and the poly-silicon film layer being an active layer. In the present disclosure, although the active layer is obtained by using the metal induction method, the metal induction layer is provided below the amorphous silicon film layer, and a barrier layer is provided between the metal induction layer and the amorphous silicon film layer.