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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10062755 B1

PDFFull Text
Date of Patent:
Aug. 28, 2018

Filed:

Jan. 10, 2018

Nanotube termination structure for power semiconductor devices

Applicant:

Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);

Inventors:

Hamza Yilmaz, Saratoga, CA (US);

Xiaobin Wang, San Jose, CA (US);

Anup Bhalla, Santa Clara, CA (US);

John Chen, Palo Alto, CA (US);

Hong Chang, Cupertino, CA (US);

Assignee:

Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);

Attorney:

Innovation Counsel LLP

Primary Examiner:

David S Blum

Int. Cl.
CPC ...
H01L 27/095 (2006.01); H01L 29/47 (2006.01); H01L 29/812 (2006.01); H01L 31/07 (2012.01); H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 27/06 (2006.01); H01L 21/265 (2006.01); H01L 29/872 (2006.01); H01L 29/861 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0886 (2013.01); H01L 21/26586 (2013.01); H01L 27/0623 (2013.01); H01L 27/0629 (2013.01); H01L 27/0664 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0638 (2013.01); H01L 29/0676 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/66348 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01);
Abstract

Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a termination structure is formed in the termination area and includes an array of termination cells formed in the termination area, the array of termination cells including a first termination cell at an interface to the active area to a last termination cell, each termination cell in the array of termination cells being formed in a mesa of the first semiconductor layer and having a first width; and an end termination cell being formed next to the last termination cell in the termination area, the end termination cell being formed in an end mesa of the first semiconductor layer and having a second width greater than the first width.

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