The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Sep. 19, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jinbum Kim, Seoul, KR;

Bonyoung Koo, Suwon-si, KR;

Seokhoon Kim, Suwon-si, KR;

Chul Kim, Seongnam-si, KR;

Kwan Heum Lee, Suwon-si, KR;

Byeongchan Lee, Yongin-si, KR;

Sujin Jung, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/3065 (2013.01); H01L 21/30608 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/165 (2013.01);
Abstract

A semiconductor device includes a substrate provided with an active pattern; a gate structure provided on the active pattern to cross the active pattern; and source/drain regions provided at both sides of the gate structure. The active pattern includes a first region below the gate structure and second regions at both sides of the gate structure. A top surface of each of the second regions is lower than that of the first region. The source/drain regions are provided on the second regions, respectively, and each of the source/drain regions covers partially both sidewalls of each of the second regions.


Find Patent Forward Citations

Loading…