The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Aug. 21, 2017
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Yosuke Takeuchi, Tokyo, JP;

Eiji Tsukuda, Tokyo, JP;

Kenichiro Sonoda, Tokyo, JP;

Shibun Tsuda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/11573 (2017.01); H01L 29/423 (2006.01); H01L 27/11565 (2017.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11573 (2013.01); H01L 27/11565 (2013.01); H01L 29/42344 (2013.01); H01L 29/7851 (2013.01); H01L 29/792 (2013.01); H01L 2029/7857 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate, an element isolation film, and a fin having side surfaces facing each other in a first direction of an upper surface and a main surface connecting the facing side surfaces and extending in a second direction orthogonal to the first direction. The device further includes a control gate electrode arranged over the side surface via a gate insulation film and extending in the first direction, and a memory gate electrode arranged over the side surface via another gate insulation film having a charge accumulation layer and extending in the first direction. Furthermore, an overlap length by which the memory gate electrode overlaps with the side surface is smaller than an overlap length by which the control gate electrode overlaps with the side surface in the direction orthogonal to the upper surface.


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