The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Jul. 13, 2017
Applicant:

Korea Institute of Science and Technology, Seoul, KR;

Inventors:

Seong Keun Kim, Seoul, KR;

Jung Joon Pyeon, Seoul, KR;

Cheol Jin Cho, Seoul, KR;

Sangtae Kim, Seoul, KR;

Doo Seok Jeong, Seoul, KR;

Seung-Hyub Baek, Seoul, KR;

Chong-Yun Kang, Seoul, KR;

Ji-Won Choi, Seoul, KR;

Jin-Sang Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10808 (2013.01); H01L 21/0228 (2013.01); H01L 21/02186 (2013.01); H01L 21/28556 (2013.01); H01L 28/75 (2013.01);
Abstract

A capacitor for a semiconductor memory element includes a lower electrode, a dielectric layer disposed on the lower electrode and including titanium oxide, and an upper electrode disposed on the dielectric layer. The lower electrode includes a first metal and a second metal, the first metal including at least one selected from the group consisting of platinum (Pt), osmium (Os), rhodium (Rh) and palladium (Pd), the second metal including at least one selected from the group consisting of ruthenium (Ru) and iridium (Jr).


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