The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
May. 10, 2017
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Stmicroelectronics SA, Mountrouge, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Yohann Solaro, Grenoble, FR;
Sorin Cristoloveanu, Seyssinet Pariset, FR;
Claire Fenouillet-Beranger, Voiron, FR;
Pascal Fonteneau, Theys, FR;
Commissariat à l'énergie atomique et aux énergies alternatives, Paris, FR;
STMicroelectronics SA, Montrouge, FR;
Centre National de la Recherche Scientifique, Paris, FR;
Abstract
A protection device for protecting an IC against electrostatic discharge includes a buried insulant layer having a thickness that is no greater than fifty nanometers with bipolar transistors arranged thereon, one of which is NPN and the other of which is PNP. A base of one merges with a collector of the other. The transistors selectively conduct a discharge current between electrodes. A first semiconductor ground plane under the buried insulant layer is capable of being electrically biased and extends underneath the base of the first bipolar transistor. The ground plane and a base of one transistor have the same doping. However, its dopant density is at least tenfold greater than that of the base.