The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Feb. 10, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Chul-yong Park, Hwaseong-si, KR;
Jeong-hoon Ahn, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/92 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/58 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 23/5286 (2013.01); H01L 23/562 (2013.01); H01L 23/564 (2013.01); H01L 23/585 (2013.01);
Abstract
Semiconductor devices may include an internal circuit, a sealing region surrounding the internal circuit, and a decoupling capacitor region in the sealing region. The decoupling capacitor region may include decoupling capacitors. Each of the decoupling capacitors may include a first capacitor metal wiring pattern connected to a high power supply line, a second capacitor metal wiring pattern spaced apart from the first capacitor metal wiring pattern and connected to a low power supply line, and a dielectric pattern between the first capacitor metal wiring pattern and the second capacitor metal wiring pattern.