The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Oct. 15, 2015
Applicant:
Ams Ag, Unterpremstaetten, AT;
Inventors:
Guenther Koppitsch, Lieboch, AT;
Bernhard Loeffler, Gleisdorf, AT;
Assignee:
ams AG, Unterpremstaetten, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/30655 (2013.01); H01L 23/481 (2013.01);
Abstract
An opening () is etched from a main surface () of a substrate () of semiconductor material by deep reactive ion etching comprising a plurality of cycles, each of the cycles including a deposition of a passivation in the opening and an application of an etchant. An additional etching is performed between two consecutive cycles by an application of a further etchant that is different from the etchant. The passivation layer () is thus etched above a sidewall () of the opening to remove undesired protrusions.