The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
May. 05, 2017
Applicant:
Nanoco Technologies, Ltd., Manchester, GB;
Inventors:
Nigel Pickett, Manchester, GB;
Ombretta Masala, Manchester, GB;
Nicky Prabhudas Savjani, Manchester, GB;
Assignee:
Nanoco Technologies, Ltd., Manchester, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 29/46 (2006.01); C23C 16/30 (2006.01); C23C 16/46 (2006.01); C30B 29/60 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02568 (2013.01); C23C 16/305 (2013.01); C23C 16/46 (2013.01); C30B 29/46 (2013.01); C30B 29/60 (2013.01); H01L 21/0262 (2013.01);
Abstract
A method of synthesis of two-dimensional metal chalcogenide monolayers, such as WSeand MoSe, is based on a chemical vapor deposition approach that uses HSe or alkyl or aryl selenide precursors to form a reactive gas. The gaseous selenium precursor may be introduced into a tube furnace containing a metal precursor at a selected temperature, wherein the selenium and metal precursors react to form metal chalcogenide monolayers.