The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Jun. 30, 2017
Applicant:

Konkuk University Industrial Cooperation Corp, Gwangjin-gu, Seoul, KR;

Inventors:

Bae Ho Park, Seoul, KR;

Chansoo Yoon, Busan, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H01L 27/115 (2017.01); H01L 45/00 (2006.01); H01L 49/02 (2006.01); H01L 27/11502 (2017.01); H01L 27/11507 (2017.01);
U.S. Cl.
CPC ...
G11C 11/221 (2013.01); H01L 27/11502 (2013.01); H01L 28/55 (2013.01); H01L 28/60 (2013.01); H01L 27/11507 (2013.01);
Abstract

Provided herein are a capacitor, a memory device including the capacitor, and a method of manufacturing the capacitor. The capacitor is manufactured by directly depositing a metal electrode having high ion mobility on an ultrathin ferroelectric layer having a certain thickness, and thus may simultaneously use metal cation migration and ferroelectric polarization inversion, and a low-power and high-performance capacitor capable of being selectively activated may be provided by simultaneously controlling an external electric field and an internal electric field caused by polarization of the inside of a ferroelectric thin film.


Find Patent Forward Citations

Loading…