The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Aug. 15, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Inventors:
Young-Seop Shim, Seoul, KR;
Jae-Hong Kim, Seoul, KR;
Sang-Soo Cha, Suwon-si, KR;
Jin-Man Han, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G06F 11/10 (2006.01); G11C 29/52 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 16/20 (2006.01); G11C 16/26 (2006.01); G11C 29/02 (2006.01); G11C 29/04 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 11/1048 (2013.01); G11C 16/10 (2013.01); G11C 16/20 (2013.01); G11C 16/26 (2013.01); G11C 16/349 (2013.01); G11C 16/3495 (2013.01); G11C 29/025 (2013.01); G11C 29/028 (2013.01); G11C 29/52 (2013.01); G11C 2029/0407 (2013.01); G11C 2029/0409 (2013.01); G11C 2029/0411 (2013.01); G11C 2029/5004 (2013.01);
Abstract
In a method of operating a nonvolatile memory device, a plurality of pages of a first memory block of a plurality of memory blocks of a memory cell array are programmed. After programming, a dummy pulse is applied to at least some of the plurality of memory blocks at least once before a read operation on is performed on one of the plurality of pages.