The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10061208 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 28, 2018

Filed:

Jan. 03, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

James Francis Mack, Woodside, CA (US);

Stephen Moffatt, St. Brelade, JE;

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/54 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/704 (2013.01); G03F 7/70375 (2013.01); G03F 7/70383 (2013.01);
Abstract

A fine feature formation method and apparatus provide photon induced deposition, etch and thermal or photon based treatment in an area of less than the diameter or cross section of a STED depleted laser beam. At least two STED depleted beams are directed to a reaction location on a substrate where a beam overlap region having an area smaller than the excitation portion of the beams is formed. A reactant or reactants introduced to the reaction region is excited by the combined energy of the excitation portions of the two beams, but not excited outside of the overlap region of the two excitation portions of the beams. A reactant is caused to occur only in the overlap region. The overlap region may be less that 20 nm wide, and less than 1 nm in width, to enable the formation of substrate features, or the change in the substrate, in a small area.


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