The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Jul. 25, 2014
Applicant:

Acquandas Gmbh, Kiel, DE;

Inventor:
Assignee:

Acquandas GmbH, Kiel, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
A61B 17/32 (2006.01); G03F 7/40 (2006.01); G03F 7/00 (2006.01); G03F 7/20 (2006.01); A61L 31/02 (2006.01); A61L 31/08 (2006.01); H01L 21/00 (2006.01); A61F 2/82 (2013.01); A61B 17/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/40 (2013.01); A61B 17/32 (2013.01); A61L 31/022 (2013.01); A61L 31/088 (2013.01); G03F 7/00 (2013.01); G03F 7/0035 (2013.01); G03F 7/0037 (2013.01); G03F 7/201 (2013.01); A61B 2017/00526 (2013.01); A61F 2/82 (2013.01); A61L 2400/16 (2013.01); A61L 2420/02 (2013.01); H01L 21/00 (2013.01);
Abstract

A medical device with structure elements is made by providing a substrate; optionally depositing a layer of a sacrificial material on the substrate; and applying of a photoresist layer to the substrate. The layer of sacrificial material and structuring of the photoresist layer according to the shape of the structure elements are produced such that first free spaces are formed which are open on the side facing away from the substrate and are delimited by side faces of the photoresist layer. An angle is set between the side faces and the substrate. Sacrificial material is deposited in the first free spaces so first mask elements from sacrificial material are adapted to the inner contour of the first free spaces. The photoresist layer is removed so that second free spaces are formed between the first mask elements.


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