The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Sep. 15, 2015
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Shuai Zhang, Beijing, CN;

Yu Cheng Chan, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); G02F 1/1368 (2006.01); G02F 1/1343 (2006.01); H01L 51/05 (2006.01); H01L 51/10 (2006.01); H01L 27/28 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/134309 (2013.01); H01L 21/02274 (2013.01); H01L 21/31053 (2013.01); H01L 27/283 (2013.01); H01L 51/057 (2013.01); H01L 51/105 (2013.01);
Abstract

Various embodiments provide a thin film transistor (TFT), a fabrication method thereof, and a display apparatus including the TFT. A carbon nanotube layer is formed over a substrate. The carbon nanotube layer includes a first plurality of carbon nanotubes. A plurality of gaps are formed through the carbon nanotube layer to provide a first patterned carbon nanotube layer. Carbon nanotube structures each including a second plurality of carbon nanotubes are formed in the plurality of gaps. The carbon nanotube structures have a carrier mobility different from the first patterned carbon nanotube layer, thereby forming an active layer for forming active structures of the thin-film transistor.


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