The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Nov. 16, 2017
Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;
Takaaki Hioka, Chiba, JP;
Mika Ebihara, Chiba, JP;
ABLIC INC., Chiba, JP;
Abstract
Provided is a semiconductor device including a vertical Hall element with improved sensitivity. The vertical Hall element includes: a semiconductor layer of a second conductivity type formed on the semiconductor substrate; a plurality of electrodes aligned along a straight line on a surface of the semiconductor layer and being impurity regions of the second conductivity type being higher in concentration than the semiconductor layer; a plurality of electrode isolation diffusion layers of the first conductivity type respectively arranged between adjacent electrodes of the plurality of electrodes on the surface of the semiconductor layer to isolate the plurality of electrodes from one another; and embedded layers being an impurity region of the second conductivity type which is higher in concentration than the semiconductor layer and being respectively provided substantially right below one of the plurality of electrode isolation diffusion layers between the semiconductor substrate and the semiconductor layer.