The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Sep. 15, 2016
Qualcomm Incorporated, San Diego, CA (US);
Wei-Chuan Chen, San Diego, CA (US);
Jung Pill Kim, San Diego, CA (US);
Seung Hyuk Kang, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Magnetoresistive (MR) sensors employing dual MR devices for differential MR sensing are provided. These MR sensors may be used as biosensors to detect the presence of biological materials as an example. An MR sensor includes dual MR sensor devices that may be tunnel magnetoresistive (TMR) devices or giant magnetoresistive (GMR) devices as examples. The MR devices are arranged such that a channel is formed between the MR devices for receiving magnetic nanoparticles. A magnetic stray field generated by the magnetic nanoparticles causes free layers in the MR devices to rotate in opposite directions, thus causing differential resistances between the MR devices for greater sensing sensitivity. Further, as another aspect, by providing the channel between the MR devices, the magnetic stray field generated by the magnetic nanoparticles can more easily rotate the magnetic moment orientation of the free layers in the MR devices, thus further increasing sensitivity.