The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2018
Filed:
Jan. 28, 2015
Applicant:
California Institute of Technology, Pasadena, CA (US);
Inventors:
Michael R. Hoffmann, South Pasadena, CA (US);
Kangwoo Cho, Seoul, KR;
Assignee:
The California Institute of Technology, Pasadena, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25B 11/04 (2006.01); C25B 11/06 (2006.01); C25B 11/08 (2006.01); C02F 1/461 (2006.01); C02F 1/467 (2006.01); C02F 101/30 (2006.01);
U.S. Cl.
CPC ...
C02F 1/46109 (2013.01); C02F 1/4674 (2013.01); C25B 11/0442 (2013.01); C02F 2001/46133 (2013.01); C02F 2001/46138 (2013.01); C02F 2101/30 (2013.01); C02F 2305/023 (2013.01); C25B 11/041 (2013.01); C25B 11/0405 (2013.01); C25B 11/0415 (2013.01); C25B 11/0447 (2013.01); C25B 11/0452 (2013.01); C25B 11/0473 (2013.01); C25B 11/0478 (2013.01); C25B 11/0484 (2013.01);
Abstract
A water purification anode has a first semiconductor contacting a second semiconductor at a heterojunction. The second semiconductor includes TiOand excludes bismuth and niobium. The first semiconductor includes iridium. In some instances, the anode includes a current collector in direct physical contact with the first semiconductor. The anode can be arranged in water such that at least one face of the second semiconductor is in direct physical contact with the water.