The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Jan. 23, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Dong Zo Kim, Yongin-si, KR;
Kwang Seob Kim, Suwon-si, KR;
Se Ho Park, Yongin-si, KR;
Yu Su Kim, Yongin-si, KR;
Han Seok Park, Seoul, KR;
Keum Su Song, Seoul, KR;
Ju Hyang Lee, Suwon-si, KR;
Min Cheol Ha, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A leakage power processing method of an electronic device including a first conductive pattern that sends and receives a communication signal associated with a communication function, a second conductive pattern that is arranged adjacent to the first conductive pattern and sends and receives a power signal used for charging, and a communication hardware interface electrically connected with the first conductive pattern is provided. The leakage power processing method includes determining, by a processor of an electronic device, whether a specific power signal is induced through the second conductive pattern and forming, by the processor of the electronic device, a closed loop including the first conductive pattern if the specific power signal of a specific magnitude or greater is induced.