The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Jul. 14, 2016
Korea Institute of Energy Research, Daejeon, KR;
Ara Cho, Daejeon, KR;
Jun-Sik Cho, Daejeon, KR;
Jae-Ho Yun, Daejeon, KR;
Sejin Ahn, Daejeon, KR;
Jihye Gwak, Daejeon, KR;
Jin-su Yoo, Daejeon, KR;
Seoung-Kyu Ahn, Daejeon, KR;
Joo-Hyung Park, Daejeon, KR;
Young-Joo Eo, Daejeon, KR;
Ki-hwan Kim, Daejeon, KR;
KOREA INSTITUTE OF ENERGY RESEARCH, Daejeon, KR;
Abstract
Disclosed is a method of forming a chalcogen compound thin film suitable for use in a light-absorption layer of a solar cell. The method includes manufacturing a precursor liquid including an Sn precursor material and an S precursor material, applying the precursor liquid to form a precursor film, and heat-treating the precursor film. The Sn precursor material and the S precursor material are liquid materials. The present invention provides a method of forming a chalcogen compound thin film using a liquid precursor material without a sulfurization process, thereby forming a high-quality SnS thin film at low cost using a process which is suitable for mass production. Further, the light-absorption layer is formed using a process which is suitable for mass production, thus enabling the manufacture of a solar cell including the chalcogen compound thin film at low cost.