The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Sep. 15, 2016
Applicant:
Ashok Chaudhari, Briarcliff Manor, NY (US);
Inventor:
Ashok Chaudhari, Briarcliff Manor, NY (US);
Assignee:
Solar-Tectic LLC, Briarcliff Manor, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01); H01L 31/0288 (2006.01); H01L 31/032 (2006.01); H01L 31/0376 (2006.01); H01L 31/0392 (2006.01); H01L 31/072 (2012.01); H01L 31/0745 (2012.01); H01L 31/0747 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02366 (2013.01); H01L 31/0288 (2013.01); H01L 31/032 (2013.01); H01L 31/0392 (2013.01); H01L 31/03767 (2013.01); H01L 31/03921 (2013.01); H01L 31/072 (2013.01); H01L 31/0745 (2013.01); H01L 31/0747 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01);
Abstract
A device and method of making an amorphous-silicon/inorganic thin film tandem solar cell including the steps of depositing a textured oxide buffer layer on an amorphous substrate, depositing a crystalline inorganic semiconductor film from a eutectic alloy on the buffer layer, and depositing an amorphous film on the crystalline inorganic film, the amorphous film forming a p-n junction with the crystalline inorganic semiconductor for a solar cell device.