The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Jun. 16, 2015
Applicant:

First Solar, Inc., Perrysburg, OH (US);

Inventors:

Rui Shao, Sylvania, OH (US);

Markus Gloeckler, Perrysburg, OH (US);

Assignee:

Frist Solar, Inc., Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/073 (2012.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022466 (2013.01); H01L 31/022483 (2013.01); H01L 31/073 (2013.01); H01L 31/18 (2013.01); H01L 31/1828 (2013.01); H01L 31/1884 (2013.01); Y02E 10/543 (2013.01); Y02P 70/521 (2015.11);
Abstract

Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a ZnMgO window layer and a low conductivity buffer layer. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a ZnMgO window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process. The process including forming a CdTe absorber layer above the ZnMgO window layer.


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