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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10056450 B1

PDFFull Text
Date of Patent:
Aug. 21, 2018

Filed:

Jan. 29, 2015

Semiconductor device

Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventor:

Kenji Kouno, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Mark Tornow

Assistant Examiner:

Priya Rampersaud

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/22 (2006.01); H01L 27/06 (2006.01); H01L 29/32 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01); H01L 27/07 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H02M 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/221 (2013.01); H01L 27/0664 (2013.01); H01L 27/0727 (2013.01); H01L 29/0638 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/6609 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01); H01L 29/861 (2013.01); H01L 29/8613 (2013.01); H01L 29/0619 (2013.01); H01L 29/407 (2013.01); H02M 7/003 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate with: a drift layer; a base layer; and a collector layer and a cathode layer. In the semiconductor substrate, when a region operating as an IGBT device is an IGBT region and a region operating as a diode device is a diode region, the IGBT and diode regions are arranged alternately in a repetitive manner; a damaged region is arranged on a surface portion of the diode region in the semiconductor substrate. The IGBT and diode regions are demarcated by a boundary between the collector and cathode layers; and a surface portion of the IGBT region includes: a portion having the damaged region at a boundary side with the diode region; and another portion without the damaged region arranged closer to an inner periphery side relative to the boundary side.

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