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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10056445 B1

PDFFull Text
Date of Patent:
Aug. 21, 2018

Filed:

Jun. 27, 2016

Manufacture method of amoled pixel drive circuit

Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;

Inventors:

Xingyu Zhou, Shenzhen, CN;

Xiaoxing Zhang, Shenzhen, CN;

Yuanjun Hsu, Shenzhen, CN;

Yadi Zhang, Shenzhen, CN;

Assignee:

SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, Guangdong, CN;

Attorney:

Leong C. Lei

Primary Examiner:

Alexander Ghyka

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 29/167 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 51/52 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); H01L 21/0217 (2013.01); H01L 21/02043 (2013.01); H01L 21/02164 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/02667 (2013.01); H01L 27/1218 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 27/1274 (2013.01); H01L 27/3246 (2013.01); H01L 27/3248 (2013.01); H01L 29/167 (2013.01); H01L 29/24 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01); H01L 29/78675 (2013.01); H01L 29/78696 (2013.01); H01L 51/0096 (2013.01); H01L 51/5206 (2013.01); H01L 27/3258 (2013.01); H01L 27/3265 (2013.01); H01L 2227/323 (2013.01); H01L 2251/308 (2013.01);
Abstract

The present invention provides a manufacture method of an AMOLED pixel driving circuit. The method utilizes the oxide semiconductor thin film transistor to be the switch thin film transistor of the AMOLED pixel driving circuit to reduce the leakage current of the switch thin film transistor, and the P type polysilicon thin film transistor manufactured by utilizing the Solid Phase Crystallization is employed to be the drive thin film transistor of the AMOLED pixel driving circuit to promote the mobility, the equality and the reliability of the drive thin film transistor, and utilizing the P type thin film transistor to be the drive thin film transistor can form the constant current type OLED element, which is more stable than the source follower type OLED formed by the N type thin film transistor, and meanwhile, the parasitic capacitance is decreased with the top gate structure.

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