The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Aug. 25, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Kasun Anupama Punchihewa, Ballston Lake, NY (US);

Jagar Singh, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/26513 (2013.01); H01L 21/823431 (2013.01); H01L 27/0814 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/66136 (2013.01); H01L 29/861 (2013.01);
Abstract

A diode includes a plurality of fins defined in a semiconductor substrate. An anode region is defined by a doped region in a first surface portion of each of the plurality of fins and in a second surface portion of the semiconductor substrate disposed between adjacent fins in the plurality of fins. The doped region includes a first dopant having a first conductivity type and is contiguous between the adjacent fins. A cathode region is defined by an inner portion of each of the plurality of fins positioned below and contacting the first surface portion and a third portion of the semiconductor substrate positioned below and contacting the second surface portion. The cathode region is contiguous and the dopants in the cathode region and anode region have opposite conductivity types. A junction is defined between the anode region and the cathode region. A first contact interfaces with the anode region.


Find Patent Forward Citations

Punchihewa, Kasun. (2018). Fin diode with increased junction area (U.S. Patent No. 10056368). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10056368

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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