The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Oct. 25, 2017
Applicant:

Olympus Corporation, Hachioji-shi, Tokyo, JP;

Inventor:

Haruhisa Saito, Tokyo, JP;

Assignee:

OLYMPUS CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/11 (2013.01); H01L 2224/13 (2013.01);
Abstract

A first surface of a first substrate included in a semiconductor device includes a first area in which a plurality of first connecting portions are disposed and a second area in which a plurality of second connecting portions are disposed. A second surface of a second substrate included in the semiconductor device includes a third area in which the plurality of first connecting portions are disposed and a fourth area in which the plurality of second connecting portions are disposed. The second area surrounds the first area on the first surface. The fourth area surrounds the third area on the second surface. A height of the second base electrode in a thickness direction of the first substrate is greater than a height of the first base electrode in the thickness direction.


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