The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Dec. 13, 2016
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Can Bayram, Ossining, NY (US);
Christopher P. D'Emic, Ossining, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Jeehwan Kim, Los Angeles, CA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/00 (2006.01); H01L 21/04 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 21/302 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/0243 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02546 (2013.01); H01L 21/302 (2013.01); H01L 29/045 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/6656 (2013.01); H01L 29/66522 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01); H01L 29/861 (2013.01);
Abstract
A hetero-integrated device includes a monocrystalline Si substrate and a trench formed in the substrate to expose a crystal surface at a bottom of the trench. Sidewall dielectric spacers are formed on sidewalls of the trench, and a III-V material layer is formed on the crystal surface at the bottom of the trench and is isolated from the sidewalls of the trench by the sidewall dielectric spacers.