The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2018
Filed:
Sep. 06, 2017
Toshiba Memory Corporation, Minato-ku, JP;
Yusuke Umezawa, Yokohama, JP;
Toshiba Memory Corporation, Minato-ku, JP;
Abstract
A semiconductor device according to an embodiment includes first and second memory cells, a first word line, and first and second bit lines. The first memory cell has a first gate electrode and a first channel. The second memory cell has a second gate electrode and a second channel. The first word line connected with each of the first and second gate electrodes. The first and second bit lines electrically connected with the first and second channels, respectively. The semiconductor device erases data of each of the first and second memory cells, and then shifts respective threshold voltages of the first and second memory cells while making a first voltage between the first gate electrode and the first channel, and a second voltage between the second gate electrode and the second channel. The first voltage is different from the second voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile