The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Jun. 23, 2017
Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Aleksey Andreev, Cambridge, GB;

David Williams, Cambridge, GB;

Assignee:

HITACHI, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06N 99/00 (2010.01);
U.S. Cl.
CPC ...
G06N 99/002 (2013.01);
Abstract

A method of reducing quantum leakage in a qubit device which includes receiving a set of energy level values for a multi-level system which includes first and second working levels |0>, |1> which provide a qubit, and at least one other level |2>, and performing an iteration of determining quantum leakage from at least one of the first and second working levels to the at least one other level for a quantum operation A for at least one pulse wherein each pulse has a respective pulse duration, determining whether the quantum leakage is greater than or equal to a threshold value; and, based on the quantum leakage being greater than or equal to the threshold value, changing the duration of at least one of the at least one pulse.


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