The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Nov. 30, 2016
Applicants:

Shinichi Harada, Kanagawa, JP;

Naoto Jikutani, Miyagi, JP;

Kazuma Izumiya, Miyagi, JP;

Yusuke Okura, Miyagi, JP;

Inventors:

Shinichi Harada, Kanagawa, JP;

Naoto Jikutani, Miyagi, JP;

Kazuma Izumiya, Miyagi, JP;

Yusuke Okura, Miyagi, JP;

Assignee:

RICOH COMPANY, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); G03G 15/04 (2006.01); H01S 5/343 (2006.01); H01S 5/42 (2006.01); G02B 19/00 (2006.01); H04N 1/028 (2006.01); H04N 1/06 (2006.01); F02P 23/04 (2006.01);
U.S. Cl.
CPC ...
G03G 15/04 (2013.01); F02P 23/04 (2013.01); G02B 19/0057 (2013.01); H01S 5/18311 (2013.01); H01S 5/34313 (2013.01); H01S 5/423 (2013.01); H04N 1/0283 (2013.01); H04N 1/0284 (2013.01); H04N 1/06 (2013.01);
Abstract

A surface-emitting laser includes an active layer on which a spacer layer is disposed, and a reflection mirror disposed on the spacer layer, including a current constriction layer that is a selectively-oxidized layer having been selectively oxidized. The current constriction layer is disposed at a position of a node of a standing-wave of an electric field of light oscillated at the active layer and is disposed away from an interface between the spacer layer and the reflection mirror by an optical distance of one-fourth of an oscillation wavelength at the active layer. The selectively-oxidized layer is made of AlGaAs. The reflection mirror includes at least one AlGaInP layer contacting the selectively-oxidized layer.


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