The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2018

Filed:

Sep. 26, 2014
Applicant:

University of Exeter, Exeter Devon, GB;

Inventors:

Saverio Russo, Exeter Devon, GB;

Monica Craciun, Exeter Devon, GB;

Thomas Hardisty Bointon, Exeter Devon, GB;

Assignee:

University of Exeter, Exeter, GB;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/26 (2006.01); C01B 32/194 (2017.01); C01B 32/188 (2017.01); C01B 32/186 (2017.01); H01B 1/04 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C23C 16/26 (2013.01); C01B 32/186 (2017.08); C01B 32/188 (2017.08); C01B 32/194 (2017.08); H01B 1/04 (2013.01); B82Y 40/00 (2013.01);
Abstract

Methods of producing a uniformly or substantially uniformly doped relatively large area multi-layered graphene element are described comprising the steps of placing the graphene element and a dopant under low pressure conditions, and holding the graphene element and dopant at an elevated temperature for a period of time while under the low pressure conditions. In one arrangement, openings are formed in a multi-layered graphene element of relatively large area prior to doping. In another arrangement, a relatively large area multi-layered graphene element formed by an epitaxial growth technique is used. The invention also relates to an element produced using the aforementioned techniques.


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